Date: 2020.10.26 (Mon.)
Time: 15:10~17:00
Topic: Transfer-Free Synthesis of Graphene on Insulating Substrates
Venue: Google Conference
https://meet.google.com/qzg-
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Speaker: Dung-Sheng Tsai
Assistant Professor | Department of Electronic Engineering, Chung Yuan Christian University, Taiwan
Abstract:
Large-area, transfer-free growth of graphene on insulating substrates is a promising step towards enabling commercial availability of graphene-based devices. While CVD-based synthesis on metals can produce large areas of graphene, a transfer process is typically needed to deposit the as-grown graphene onto desired substrates such as insulating gate dielectrics. This work focuses on the fundamental analysis and optimization of metal-catalyzed graphitization directly on SiO2. Recent results demonstrated the feasibility and limitations of nickel- and copper-induced graphitization with methane as a carbon source. Current research explores the mechanism behind the graphitization and the possibility of benzene plasma as an alternative carbon precursor. Ultimately, these studies seek to inform the judicious choice of carbon sources and parameter space that will lead to high-quality, few-layer graphene directly on target substrates.
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